dr. K.M. Dowling
Electronic Instrumentation (EI), Department of Microelectronics
Expertise: Wide-bandgap Electronics: Sensors, MEMS, and Power DevicesThemes: Merging (Ultra)-Wide bandgap Sensors with Integrated Circuits
Dr. Karen Dowling was born in Seattle, USA in 1991 and grew up in Ann Arbor, Michigan. She recieved her B.S. degree in electrical engineering from the California Institute of Technology in 2013. She obtained her M.S. and PhD in EE from Stanford University in California, USA in 2015 and 2019, respectively. Her thesis focused on creating high quality magnetometers for extreme environments using Gallium Nitride, as well as some micromachining techniques in Silicon Carbide, both wide bandgap semiconductors. Before joining TU Delft, she was a postdoctoral researcher at Lawrence Livermore National Laboratory (LLNL), expanding her work to RF opto-electronic power devices known as photo-semiconductor switches. She joined TU Delft as an assistant professor in August 2022. In the Department of Microelectronics , Dr. Dowling is excited to combine both her love of sensors for harsh environments with optically coupled conduction mechanisms to open new avenues for high performing microsensors across the spectrum from fundamental research to device development and (someday) deployment.
Karen was awarded a National Science Foundation Graduate Research Fellowship in 2015, and in 2023 was awarded the 2022 Marie Skłodowska-Curie Postdoctoral Fellowship.
ET4260 Microsystem integration
Fundamental and practical aspects of integrated microsystems in silicon
Last updated: 15 Sep 2023