[2025-26] MSc Topics in MUSIC Lab

Topic 1: 3D Hall Sensors & GaN Hall Sensors

Hall-effect sensors are a cornerstone of automotive, industrial, and consumer electronics, holding the largest share of the magnetic sensor market. GaN based hall devices have been shown to operate up to 600C and down to 50K with low offset, making them a great candidate for deep space sensors. Futher work to be pursued in their temperature limitations at the system level, as well as in power electrical circuits. 

More recently, our group managed to fabricate a novel type of 3D Hall effect sensor, based on an inverted pyramid structure, and we proved that the device is able to detect the magnetic field’s components with high sensitivity. The structure is realized by means of crystallographic etching of silicon <100> and an active area manufactured on its surface. Several new ideas are eligible for the next generation of PYRAMID fabrication steps to further pursue higher performing devices! Modelling and fabricaiton heavy projects.

Topic 2: Thermoelectrics for Energy Harvesting in Deep Space

Recently, we investigated GaN's Seebeck effect. While we have found a feasible direction, there are several challenges which remain to realize a more efficient system. Physics heavy project!

Topic 3: Negative Differential Moblity in III-Vs

Some materials exhibit a reverse saturation velocity at high electric fields, traditionally known as negative differential mobility. There may be a path to extremely fast and efficient RF pulses and detection  Physics and experimental heavy project!

Topic 4: FEM Modelling of thermal-diffusivity sensors in CMOS technology

Recently, it has been shown that accurate temperature sensors can be made by measuring the thermal diffusivity of silicon chips. Inaccuracies of 0.2C have been reported over a 200C range. However, the optimization of such sensors has been limited by the lack of accurate models of their electro-thermal operation. The goal of this project is to use FEM tools to develop such models. Physics modelling and data project, in collaboration with prof. Makinwa

Topic 5: GaN HEMT Devices

GaN high electron mobility transistors are an emerging technology in power electronics and RF because of its high durabilitiy, speed, and power handling, and wide temperature operation. Fundamental challenges still exist with the interfaces of GaN with other mateirals, as well opportunities to create novel sensors and devices. This research direction will be to bring GaN device modelling and fabrication to realization at TU Delft. Modelling and Fabrication

Assignment

In these projects you may:

1.   Perform a literature review of state-of-the-art in the technology/topic

2.   Model or calculate with FEM or other simulation your design

3.   Create a flow chart and fabricate your design in EKL/Kavli. OR tapeout in collaboration with another supervsor

4.   Test your hardware and benchmark against your literature review.

Requirements

Recommended Background (and courses in ME track) :

Semiconductor physics (EE4585)

Clean room fabrication (ET4289)

Electrical benchtop testing/ Measurement and Instrumentation (EE4C08)

Finite Element Modelling of Microsystems(ET4260

Contact

Last modified: 2025-01-13