Design and simulation of infrared-capable CMOS Image sensors

The increasing demand for high-performance imaging sensors has driven significant advancements in CMOS sensor technology. A key innovation in this field is the development of back-side illuminated (BSI) CMOS image sensors (CIS), which offer improved light absorption and quantum efficiency compared to traditional top-illuminated designs. Further reduction of optical losses and performance enhancement, especially in the SWIR range, can be led by integrating a low-bandgap material with silicon. This project aims to design and simulate a BSI Ge-on-Si CIS that operates efficiently across the visible and SWIR spectrum, with the goal of developing a sensor that provides high sensitivity and broad spectral coverage for diverse imaging applications.

You will work under the supervision of two PhD students and will be part of the IS group.

Assignment

In this thesis project, you will:

1. Review literature of state-of-the-art Si-on-Ge photodetectors.
2. Study and simulate in AFORS-HET the band structure of photodetectors for various layer thicknesses and doping configurations.
3. Simulate optical and electronic characteristics of different architectures using SPECTRA and TOCCATA.
4. Interpret data results and define the optimal configurations.

Requirements

Recommended Background (but not all is required - you can learn in the project!) :

• Semiconductor physics
• Simulations in AFORS-HET, SPECTRA, and TOCCATA
• Excitement about imaging sensors!

Contact

Last modified: 2024-09-03