Reliability tests and Failure mechanisms of SiC power devices

New wide band gap (WBG) technologies like silicon carbide (SiC) and the direct integration of smart sensors are helping to global decarbonization, leading to the massive increase in the number, variety, and complexity of power electronic components and systems. However, the increase in power density due to SiC also results in defects that degrade the remaining useful lifetime for power and sensor electronics. Design for reliability tests and predictive health management based on electro-physical models are required for this work, to develop early analysis instead of simply waiting for consequences.

Assignment

The proposed work packages includes:

• Literature review on the state-of-arts of failure mechanisms and reliability testing methods.
• Tests: Accelerated stress tests combining several loading conditions - e.g., active power and passive temperature cycles or combination of thermal and mechanical load under relevant atmospheres (e.g., moisture) and the lifetime estimation models.
• Characterisation and prediction: Identification of early warning indicators for device & package degradation (die bonds, wires, ...) and use them for lifetime predictions.
• Model: A physics-based model for near-oxide interface traps, and a model inside the simulation tool for SiC is highly encouraged.

Requirements

We are looking for a creative, motivated and self-driven MSc student with background in microelectronics, material science or nanotechnology.

Contact

Last modified: 2023-12-04